Centrum för III-Nitrid teknologi (C3NiT)

Viktiga resultat som projektet gav

C3NiT has focused on stimulating and boosting the Swedish Industry-Academia Cluster on group III-nitrides and elevating its position to be among the leading wide bandgap clusters and be a preferred partner in major EU initiatives. C3NiT has developed the research infrastructures for material growth and characterization; device and circuit fabrication and characterization at academia to be able to support relevant industrial collaborations. It has contributed to the availability of III-Nitride electronics by supporting the growth of a Swedish and European supply chain.

Långsiktiga effekter som förväntas

The following technologies motivated by requirements from industrial partners were developed during C3NiT: -A new quartz-free hot-wall MOCVD reactor, -A new generation of GaN HEMTs, -Graded AlGaN ultra-thin-channel HEMTs, -High-Al-content AlGaN barrier HEMTs with back barriers, -Low-dislocation density, GaN nanowire reformed layers, -An AlN cap for SiC MOSFETs, -Terahertz frequency-domain optical Hall effect technique, -Improved surface passivation of GaN HEMTs. These developments have initiated new areas in III-N electronics, technology, and research activities.

Upplägg och genomförande

C3NiT total budget of 88.8 MSEK incl. both cash and in-kind contributions (2018 2022) is funded in equal parts by the Swedish Innovation Agency Vinnova, the industrial partners and academia. The centre is organized in six long-term research and innovation projects, which are complemented by short-term projects lead by SMEs. C3NiT project teams consist of researchers from the universities, PhD students, and personnel from the industrial partners. We have carefully selected the projects to maximize partner participation and enhance interaction.

Externa länkar

As of January 2023-01-31 we experience technical difficulties with the server. We hope to have this fixed asap.