Eurostar Project BESIDES 7760 Ascatron
| Reference number | |
| Coordinator | ASCATRON AB |
| Funding from Vinnova | SEK 4 299 000 |
| Project duration | April 2013 - September 2016 |
| Status | Completed |
Purpose and goal
The project aims to develop power semiconductors for demanding applications with temperatures up to 250C. The project is a collaboration with Cissoid from Belgium. Ascatron has in the project developed SiC diodes and transistors based on our ´Buried Grid´ concept. Cissoid has developed packaging and developed a demonstration system. Ascatron has reached the target for 1200V diodes.
Expected results and effects
The project has resulted in the design and manufacturing process of SiC power diodes for demanding applications. This has led to Ascatron now working on the development of its first component products. For this Ascatron raised 4M Euros in funding.
Planned approach and implementation
The project was divided into the following parts: 1. Systems and component specification 2. Development of manufacturing processes for silicon carbide components 3. Systems and component design 4. Production of components and demo systems 5. Characterization 6. System Demonstration The work has largely been done separately by Ascatron and Cissoid through clear responsibilities. The result of systems analysis clarified the need for high-voltage components for relatively small power ratings and the recuirement for normally-off transistors in most applications.