ECSEL 2014 RIA OSIRIS Norstel AB
|Funding from Vinnova||SEK 2 232 447|
|Project duration||May 2015 - January 2019|
Purpose and goal
The project aims to develop and produce isotope pure silicon carbide (SiC). There are indications on a higher thermal conductivity in isotope pure SiC compared to SiC with the natural distribution of the isotpes. The goal is to demonstrate manufacturing of the material and process devices for high frequency (GaN HEMT) and high power (siC PiN) to verify if the increased thermal transport from the active part of the device also improve the performance of the devices.
Expected results and effects
The project have successfully demonstrated growth of isotope pure SiC with high quality. The material has as predicted higher thermal conductivity compared to SiC with natural distribution of isotopes. The high frequency devices processed have a more robust behavior and increased time to failure.
Planned approach and implementation
Linköping University (Sweden) have grown epitaxial layers of isotope pure SiC on substrates from Norstel (Sweden). Semiconductor devices are when processed and verified at Ascatron (Sweden) and at Thales III-V lab (France). The other partners in the project have worked on methods to produce isotope pure source gas for silicon, different measurement techniques and simulation of material and devices.