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ECSEL 2014, RIA, Optimal SiC substrates for integrated microwave and power circuts - OSIRIS, Linköpings universitet

Reference number
Coordinator Linköpings universitet - IFM, Linköping University
Funding from Vinnova SEK 4 153 830
Project duration May 2015 - January 2019
Status Completed

Purpose and goal

The project’s goal was to produce isotope pure silicon carbide (SiC). There are indications that isotope pure SiC has higher thermal conductivity than “ordinary” SiC. The project should demonstrate production of material and semiconductor devices for high frequency (GaN HEMT) and high voltage (SiC PIN) to verify if the higher thermal conductivity from the devices’ active part would increase their performance.

Expected effects and result

The project has demonstrated growth of isotope pure silicon carbide of high quality. The material has, as expected, higher thermal conductivity than SiC with a natural isotopic composition. The high frequency components are more robust, leading to longer lifetime, while almost no difference in performance was possible to demonstrate for the power devices.

Planned approach and implementation

Linköping University (Sweden) has produced layers of isotope pure silicon carbide on substrates from Norstel AB (Sweden). Devices were produced and verified at Ascatron AB (Sweden) and Thales III-V Lab (France). Other partners in the project has worked on developing methods to produce isotope pure silicon containing gases, various measurement methods and simulations for materials and devices.

External links

The project description has been provided by the project members themselves and the text has not been looked at by our editors.

Last updated 21 December 2018

Reference number 2015-00960

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