ECSEL 2014, RIA, Optimal SiC substrates for integrated microwave and power circuts - OSIRIS, Linköpings universitet
|Coordinator||Linköpings universitet - IFM, Linköping University|
|Funding from Vinnova||SEK 4 153 830|
|Project duration||May 2015 - January 2019|
Purpose and goal
The project’s goal was to produce isotope pure silicon carbide (SiC). There are indications that isotope pure SiC has higher thermal conductivity than “ordinary” SiC. The project should demonstrate production of material and semiconductor devices for high frequency (GaN HEMT) and high voltage (SiC PIN) to verify if the higher thermal conductivity from the devices’ active part would increase their performance.
Expected results and effects
The project has demonstrated growth of isotope pure silicon carbide of high quality. The material has, as expected, higher thermal conductivity than SiC with a natural isotopic composition. The high frequency components are more robust, leading to longer lifetime, while almost no difference in performance was possible to demonstrate for the power devices.
Planned approach and implementation
Linköping University (Sweden) has produced layers of isotope pure silicon carbide on substrates from Norstel AB (Sweden). Devices were produced and verified at Ascatron AB (Sweden) and Thales III-V Lab (France). Other partners in the project has worked on developing methods to produce isotope pure silicon containing gases, various measurement methods and simulations for materials and devices.