Modelling and Verification of GaN Growth System
|Funding from Vinnova||SEK 333 300|
|Project duration||September 2018 - February 2019|
Purpose and goal
Modelling and measurement of the flow profile in an epitaxial reactor has been made. The measurements confirm the models very well.
Expected results and effects
The work that was made will lead to significantly improved uniformity of the grown layers and enable a simple scaling of epitaxial reactors.
Planned approach and implementation
The models were made and a method to measure was evaluated and approved. The work was done in collaboration with Epiluvac AB. The measurement method was unproven but worked beyond expectation.