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Modelling and Verification of GaN Growth System

Reference number
Coordinator SWEGAN AB
Funding from Vinnova SEK 333 300
Project duration September 2018 - February 2019
Status Completed
Venture Competence centre

Purpose and goal

Modelling and measurement of the flow profile in an epitaxial reactor has been made. The measurements confirm the models very well.

Expected results and effects

The work that was made will lead to significantly improved uniformity of the grown layers and enable a simple scaling of epitaxial reactors.

Planned approach and implementation

The models were made and a method to measure was evaluated and approved. The work was done in collaboration with Epiluvac AB. The measurement method was unproven but worked beyond expectation.

The project description has been provided by the project members themselves and the text has not been looked at by our editors.

Last updated 25 October 2018

Reference number 2018-04363

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