ECSEL 2018 RIA UltimateGaN RISE

Purpose and goal

The purpose of the project was to develop Swedish competences and innovation with GaN power electronics materials, components, and systems. Two Swedish material innovations were further developed and brought closer to industrialization and scale-up. The coalesced nanowire technology of Hexagem was able to demonstrate growth of thick low defect density GaN epitaxy for future high voltage devices. The SweGaN QuanFine material allowed the demonstration of state-of-the-art breakdown voltage performance with GaN HEMT devices on 4” wafer production within the Electrum laboratory.

Expected results and effects

The UltimateGaN project has contributed significantly to the advancement of GaN material technology within Europe. A large European ecosystem has been established and will continue to grow in future projects. In Sweden, the industrial partners SweGaN and Hexagem further developed their GaN epitaxy material technology using RISE competence and test and demonstration facilities ProNano and Electrum. RISE increased its competence with wide bandgap materials, devices and systems for power electronics and developed a GaN HEMT manufacturing process now available to industry.

Planned approach and implementation

The project was coordinated very effectively at the EU level by Infineon Austria and led technically through work package leaders. RISE interacted within WP1 led by IMEC, WP2 led by Infineon Austria and WP4 led by SAL in Austria. An internal program manager led several units and geographical locations at RISE: 1) ProNano in Lund for development of coalesced nanowire technology, 2) Electrum in Stockholm/Linköping for development of QuanFine GaN on SiC technology and 3) RISE Packaging group in Mölndal for the development of 3D printing technology for GaN HEMT device packaging.

External links

Research for GaN technologies, devices and applications to address the challenges of the futureGaN roadmap.