Quad Band Infrared detector based on Graphene/Silicon heterojunction
|Coordinator||GKN AEROSPACE SWEDEN AB - Avd 9005|
|Funding from Vinnova||SEK 284 000|
|Project duration||November 2017 - May 2018|
|Venture||Strategic innovation program SIO Grafen|
Purpose and goal
The goal of this pre-study project was manufacturing and verification of infrared 4-band detectors (1.5-5 µm) based on a graphene-silicon heterostructure concept developed by Chalmers. The intended verification included experiments and simulations. During manufacture, it was found that the sensor could not be realized with specified spectral band properties, probably due to unintentional doping caused by impurities in graphene. Due to this, the goal was only partially met noise sensitivity could be verified by experiments while the wavelength sensitivity was simulated.
Expected results and effects
The result is a sensor consisting of infrared detectors with very low noise levels, operating at room temperature. With further development of the manufacturing process, band selectivity is also expected, i.e. the detectors can measure incident light/radiation separately in four different wavelength bands. The unrealized 4-band sensor has been simulated to analyze its application in temperature measurement of metallic materials. Simulations shows that such a sensor would have great value in monitoring manufacturing processes of metallic materials, and in other applications.
Planned approach and implementation
The pre-study project is a collaboration between three parties. GKN Aerospace AB is project leader and end user and contributes with industrial input and application case. Termisk Systemteknik AB performs model development and simulation of radiation and sensor performance for a chosen application case. Chalmers University of Technology manufactures and performs verification measurements of the detector. Apart from the technical problems of the manufacturing process, the cooperation worked well and the three parties complemented each other well.