PLACES2BE: Pilot Lines for Advanced CMOS Enhanced by SOI in 2x nodes, Built in Europe

Important results from the project

PLACES2BE is an ENIAC JU Key Enabling Technology project. The main objective for the complete European project is the industrialisation of 28 nm and 14 nm CMOS FDSOI technology. The project also aimed at establishing a CMOS FDSOI design ecosystem in Europe. In Sweden, the project aim was to investigate whether the technology would be suitable for LTE wireless transceivers. Acreo´s focus was to investigate the RF power handling capability of the technology, and to utilize its potential advantages, (e.g. body bias, transistor stacking), for RF power amp and RF power switch components.

Expected long term effects

At the European level PLACES2BE has contributed to the 14 nm and 28 nm CMOS FDSOI technology reaching high levels of maturity. The successful industrialisation of these advanced CMOS technologies is vital to help Europe maintain, and possibly increase, its low market share within this area. In Sweden Acreo designed a 28nm CMOS FDSOI test chip, containing test circuits for LTE RF power switches and RF power amplifier, fabricated by STMicroelectronics. Positive measurement results indicate that the technology is suitable for RF power circuit application in LTE wireless modems.

Approach and implementation

The closure of the Swedish industrial partners during the project affected its implementation in Sweden. VINNOVA decided not to fund the project in 2015 as there were no Swedish industrial partners remaining in the project. Despite such setbacks the project schedule was maintained. Acreo delivered all the design documentation so that a test chip could be fabricated and delivered on time. This allowed measurements to be made on the test chip so that the measurement results could be reported in time for the final documentation. The budget was maintained despite its reduction for 2015.