Modelling and verification of GaN growth system WP1
|Funding from Vinnova||SEK 333 333|
|Project duration||September 2018 - December 2018|
Purpose and goal
A new CVD epitaxial reactor for gallium-nitride (GaN) has been installed and commissioned in the SweGaN lab, located at the University of Linköping. Extensive modelling has been done earlier and in this project we compared the results from theoretical calculations with data measured in the real reactor.
Expected results and effects
The measurement results correspond well with the results that the theoretical model and the simulations gave. The difference is within the error margins for the measurement. The measurements have also given us an idea of within which limits the pressure, temperature and flow that the reactor can be used in an optimal way.
Planned approach and implementation
Temperature measurements were made in 25 different measuring points in the reactor. For each point, the temperature was measured for different flows, pressures and temperatures in the growth zone. All data was logged and evaluated. Altogether, around 2000 different measured values were recorded. The analysis work and the evaluation were therefore extensive and time-consuming. But by making a 3D chart, it became possible to see trends relatively easy and find the system´s "sweet spot".