Single crystal metal deposition through successive dipping electroplating

Purpose and goal

We want to achieve production of Cu interconnects with better conductivity than can be made using traditional techniques, through the innovation of successive dipping of the wafer during electroplating. With this novel deposition method we want to extend the use of Cu into the nanoregime, which is of enormous advantage and value for the semiconductor industry. The Cu quality improvement is connected to minimizing the amount of individual grains, arising from the number of nucleation points on the underlying substrate surface, by gradually introducing the wafer into the plating bath.