ECSEL 2017 RIA "5G-GaN2" "SweGaN"

Important results from the project

Most of the purpose and the goals have been addressed and fulfilled in the project. It can also be noted that the project has also led to commercial success.

Expected long term effects

18 different GaN-on-SiC HEMT heterostructures was realized and delivered to the partners to process, evaluate, and benchmark the material performance and reliability at the device level. Our unique buffer-free GaN-on-SiC heterostructures showed competitive device performance in terms of the uniformity, leakage current, power efficiency and density. The biggest highlight of our material in the benchmarking activity was the superiority of the material robustness under the reliability stress tests at high temperature. All of the devices made on QuanFINE passed the stress test.

Approach and implementation

The tasks of our research and development were highly driven by our partners’ needs and goals. The 18 different heterostructures were the outcome of the collaboration with the partners, which started from collecting the desirable device characteristics from the partners, to developing the material growth, and then collecting the device feedback, establishing the correlations between the material and device results. And then we iterated the cycle to achieve the ultimate goals.