Robust single photon sources based on colour centres in silicon carbide
| Reference number | |
| Coordinator | Linköpings universitet - Linköpings tekniska högskola Inst f fysik kemi & biologi IFM |
| Funding from Vinnova | SEK 989 180 |
| Project duration | June 2024 - March 2025 |
| Status | Completed |
| Venture | Emerging technology solutions |
| Call | Emerging technology solutions within quantum technology and synthetic biology 2024 |
Important results from the project
We have fulfilled project goal: achieving stable emissions of single Si vacancies in n-type and single divacancies in p-type 4H-SiC layers. In addition, several new defect centers emitting light at telecom S-band have been discovered. The project also leads to new national collaborations with STMicroelctronics, RISE, KTH, Xtal.Works, and Polar Light Technology, and international collaboration that help us to get one EU project, one QSIP project, and to involve in two other EU projects.
Expected long term effects
Stabilizing the charge state of individual photon emitters without using a repump laser minimizes fluctuations in local electric fields and spins. This helps to achieve narrow optical linewidths and long spin coherence times approaching their limits. The improved performance is crucial for defect-based qubits in the development of quantum networks and quantum sensing. Our defect technique opens up the possibility of commercial materials applications.
Approach and implementation
For gaining time, we bought a p-type 4H-SiC wafer already in May 2024, before the approval of the project, and received it in August 2024. Both electron irradiations V-implantations have been done in August-September 2024 and measurements have been performed since August 2024. With materials being available shortly after the project start and our experience on creation of single defects, all the goals of the project could be fulfilled.