Latch-free LIGBT a new device with break-through performance
| Reference number | |
| Coordinator | Uppsala universitet - Institutionen för teknikvetenskaper |
| Funding from Vinnova | SEK 3 600 000 |
| Project duration | November 2013 - June 2018 |
| Status | Completed |
Purpose and goal
New device concept to be evaluated and developed with the goal to deliver break-through performance for silicon-based RF-technology. The new latch-free LIGBT device is manufactured at commercial silicon foundry.
Expected results and effects
Break-through performance with 10x higher currect and power density than comparable silicon LDMOS and LIGBT devices. Class-E amplifier in the MHz-region demonstrated with high output power and efficiency
Planned approach and implementation
Collaboration between Uppsala University and Comheat Microwave AB. New device concept patented and manufacatured at commercial foundry. Prototypes delivered to potential customers. Project was delayed 1,5 years mainly due to long lead times at foundry