GaN6G+: Unlocking Performance and Efficiency in Future 6G Power Amplifiers

Purpose and goal

The project aims to improve the efficiency, performance, and understanding of GaN-based power amplifiers (7–15 GHz) for 6G and defense applications. By enhancing the epitaxial design of QuanFINE® technology and optimizing component processing, the performance of HEMT and MMIC devices will be optimized with respect to efficiency and current density. The project will raise the technology readiness level, enabling a more energy-efficient and sustainable infrastructure.

Expected effects and result

The project delivers validated HEMTs and MMICs, improved models and specifications, and raises the TRL from 3 to 5. The results enable more energy-efficient and reliable PAs for 6G and defense, reducing energy consumption and heat generation. This strengthens Sweden´s position in telecom and defense and contributes to sustainable, future-proof wireless infrastructure.

Planned approach and implementation

The project is led by SweGaN, also responsible for the epitaxial development of QuanFINE®. Chalmers will perform modelling, component processing, and empirical transistor modelling. The resulting models will be used by Ericsson and SAAB for the design and evaluation of power amplifiers (PAs). In parallel, industrial manufacturing will be carried out at UMS. Through this collaboration, material and process properties are linked to PA performance to optimize efficiency, output power, and linearity