ECSEL 2018 RIA UltimateGaN ”SweGaN”
| Reference number | |
| Coordinator | SweGaN AB |
| Funding from Vinnova | SEK 3 066 354 |
| Project duration | May 2019 - April 2022 |
| Status | Completed |
| Venture | ECSEL |
Important results from the project
Most of the purpose and the goals have been addressed and fulfilled in the project.
Expected long term effects
1. Scaling the buffer-free GaN-on-SiC MOCVD process to 6’’ done. Improved epitaxial stacks to enhance the voltage blocking capability and to reduce the trapping 2. Built laser-based wafer slicing setup that cut and make line damage inside SiC bulk crystal. However, due to the limited laser performance, line damage cannot be well focused and controlled 3. New thermal surface polishing developed to achieve atomically flat SiC surface morphology 4. 4’’ 2cm-thick semi-insulating SiC crystal growth was developed. The SI property uniformity over the crystal needs to be further improved
Approach and implementation
The tasks of the research and development were well designed in a top-down approach. We divided the ultimate objective to many different tasks and milestones. They were conducted almost in parallel to be efficient and effective.