ENIAC Large Area Silicon Carbide Substrates and the heterroepitaxial GaN for power device appl.
| Reference number | |
| Coordinator | SenSiC AB |
| Funding from Vinnova | SEK 900 000 |
| Project duration | May 2010 - March 2014 |
| Status | Completed |
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ENIAC Large Area Silicon Carbide Substrates and the heterroepitaxial GaN for power device appl.