ECSEL 2020 RIA YeSvGaN -Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost
| Reference number | |
| Coordinator | Lunds universitet - Lunds Tekniska Högskola Fysiska institutionen |
| Funding from Vinnova | SEK 5 960 385 |
| Project duration | May 2021 - October 2024 |
| Status | Completed |
| Venture | ECSEL |
Important results from the project
The project successfully optimized GaN-on-Si, demonstrating high-quality GaN layers on 50 mm and 150 mm Si wafers that met state-of-the-art standards. It also developed advanced, non-intrusive characterization techniques, such as Terahertz Ellipsometry to analyze GaN properties like mobility, doping levels, and material quality. These methods provided valuable insights that helped improve implantation and activation techniques for p-type doping.
Expected long term effects
The project advanced GaN coalescence on Si establishing key connections across the value chain for continued development and commercialization. Strong partnerships fostered collaboration and knowledge exchange, while advanced characterization techniques boosted the project’s impact in the semiconductor industry. The collaboration is expected to continue with future joint ventures and research.
Approach and implementation
The project advanced GaN-on-Si technology by optimizing growth, improving material quality, and scaling for commercial use. Key challenges addressed included reducing dislocations, managing stress, and scaling to 150mm wafers. Using coalescence epitaxy and stress modeling, the team achieved breakthroughs in defect reduction. Collaboration with academic and industrial partners enabled iterative refinements, demonstrating the technology´s potential despite challenges in uniformity and handling.