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E!113749, LPCVD, Kiselkarbid i Stockholm AB

Reference number
Coordinator Kiselkarbid i Stockholm AB
Funding from Vinnova SEK 4 292 000
Project duration April 2020 - January 2026
Status Completed

Important results from the project

Due to delays, the production system will not be operational until 2026. Significant progress has been made in evaluating, handling, and understanding source material manufacturing. These advances will accelerate the qualification of the production system when it goes live. The development of the production system will continue even after the project end date and all project goals will be achieved.

Expected long term effects

After completion of the project, our 4H-SiC process will become even more competitive thanks to the combination of industry-leading crystal quality and a competitive production cost.

Approach and implementation

The goal of this project was to develop a process for the production of 3C-SiC crystal known as beta-SiC for use as a source material in our growth process that manufactures monocrystalline 4H-SiC substrates for use in power electronics. Due to delays, mostly related to the COVID epidemic, it has not been possible to follow the schedule at the planned pace, but work is ongoing and the start-up and qualification of the production system is planned for 2026.

The project description has been provided by the project members themselves and the text has not been looked at by our editors.

Last updated 23 January 2026

Reference number 2020-00347