SMF C3NiT: Optimization of gas utilization in the production of GaN

Important results from the project

** Denna text är maskinöversatt ** In the epitaxial process for the production of the semiconductor material gallium nitride (GaN), the gas utilization is relatively low and the growth rate is relatively low. Attempts have been made to improve growth by using a catalyst. However, the catalyst had no decisive effect.

Expected long term effects

The starting process was optimized and it was therefore expected that the introduction of a catalyst would change the result significantly. However, this did not happen. There are very many parameters to vary, for example the temperature of the catalyst, the geometric design, the distance between the catalyst and the growth zone, the composition and velocity of the gas. In the experiments that have been carried out, the process has not been significantly affected, which, however, does not exclude that there may be another process window where the catalyst has a significant effect.

Approach and implementation

** Denna text är maskinöversatt ** The experiments were performed in a hot wall reactor at Linköpings Universitet in collaboration with staff from Linköpings Universitet. Each test is relatively expensive, which is why they are limited to about 10 experiments. The reactor has been used for similar runs for a long time, which is why there is plenty of comparative material. The focus of the experiments has been decided jointly by Epiluvac and staff at Linköpings Universitet. Measurement and evaluation of the results have primarily been done by doctoral students at Linköping University.