High temperature diode for compact power electronics
| Reference number | |
| Coordinator | ASCATRON AB |
| Funding from Vinnova | SEK 1 900 000 |
| Project duration | December 2012 - May 2014 |
| Status | Completed |
Purpose and goal
The project aims to develop a silicon carbide (SiC) diode that works well at high temperatures and thus enable very compact and efficient power electronics without requiring complex cooling. The starting point is a new diode concept combining Schottky diodes with buried PN diodes for effective blocking. In this project, we have developed diodes for 10A which blocks over 1700V and works at 250C with a leakage current that is 100 times lower than the best available commercial devices.
Results and expected effects
With the project has Ascatron been able to optimize and demonstrated a new diode design for demanding power applications based on our unique Silicon Carbide material technology (3DSiC). It has resulted in that the development of concrete products now continues with several partners and customers. Expected effects for short-term are sales of customized diodes for various niche applications, and for long-term licensing the technology and manufacturing eptaxy for volume applications.
Approach and implementation
The project was implemented as planned including extensive discussions with potential customers during the whole project for verification of target specification. Development work was done in several rounds of optimization of design, process development, prototyping and electrical evaluation as input to the next round. Components have been encapsulated and performance compared with commercial components. Results were presented at the Scientific Conference (HITEC 2014).