E!13123 SiCTAA Ascatron
|Funding from Vinnova||SEK 2 156 740|
|Project duration||March 2019 - November 2020|
|Venture||International Joint Calls|
Purpose and goal
Develop a supply chain for novel Silicon Carbide Junction Gate Field-Effect Transistor devices for use in lightning strike protection and power electronics applications in aerospace; providing higher temperature capable and more radiation tolerant electronics to facilitate the More Electric Engine. The project is a collaboration between the aircraft engine manufacturer Rolls-Royce, the semiconductor manufacturer Ascatron, the electronics manufacturer TT Electronics Semelab, the University of Durham and the innovation center CSA Catapult.
Expected results and effects
Ascatron´s tasks in the project is the fabrication of SiC chips. In WP1, Ascatron develops the fabrication process of a SiC diode with combined current limiting and Avalanche handling capability. In WP2, the fabrication process of SiC JFETs with high temperature capability for compact power inverters is developed. The device designs come from Durham universitet. Ascatrons goal is to be a part of the future manufacturing chain and supply the developed SiC chips till partner TT Electronics and CSA Catapult for packaging in discrete form and in power modules.
Planned approach and implementation
The project starts with the definition of the device specifications and requirements by the coordinator Rolls-Royce. Thereafter, Durham universitet will do the device designs and Ascatron will process these designs based on Ascatron´s 3DSiC technology. 2 batches are planned.